Typical Characteristics TJ = 25°C unless otherwise noted
10
4000
1000
C
iss
V
DD
= 50V
8
6
4
2
0
V
= 100V
DD
C
oss
V
= 150V
DD
C
rss
100
f = 1MHz
= 0V
V
GS
10
0
10
20
30
40
0.1
1
10
100
Q , GATE CHARGE(nC)
g
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
5
4
25
20
15
10
5
V
GS
= 10V
3
TJ = 25oC
V
GS
= 6V
2
TJ = 125oC
R
θJC
= 1.6oC/W
50
1
0.01
0
0.1
1
10
25
75
100
125
150
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE (oC)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
60
10
2000
o
T
= 25 C
A
1000
100
10
100us
FOR TEMPERATURES
o
VGS = 10V
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
150 – T
1
0.1
1ms
A
----------------------
I = I
25
125
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
100ms
SINGLE PULSE
0.01
1E-3
1s
T
= MAX RATED
= 25OC
J
1
SINGLE PULSE
DC
T
A
0.3
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
102
103
700
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
FDMS2672 Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
