Typical Characteristics TJ = 25°C unless otherwise noted
40
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 8V
GS
30
20
10
0
VGS = 5V
VGS = 6V
V
= 6V
GS
V
= 10V
GS
VGS = 8V
V
GS
= 5V
VGS = 10V
0
1
2
3
4
0
10
20
30
40
V
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
DS
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.4
200
175
150
125
100
75
ID = 3.7A
GS = 10V
I
D
= 4.5A
PULSE DURATION = 80µs
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
DUTY CYCLE = 0.5%MAX
T
A
= 150oC
T
A
= 25oC
50
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
25
40
10
V
GS
= 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
T = 150oC
J
1
0.1
T = 150oC
15
10
5
J
T
= 25oC
J
T
= 25oC
J
T
J
= -55oC
0.01
1E-3
T
= -55oC
J
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
V , BODY DIODE FORWARD VOLTAGE (V)
SD
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
FDMS2672 Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
