Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
200
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
210
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 160V
1
µA
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
3.1
-10
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
mV/°C
VGS = 10V, ID = 3.7A
64
69
77
88
rDS(on)
gFS
Drain to Source On Resistance
VGS = 6V, ID = 3.5A
mΩ
VGS = 10V, ID = 3.7A TJ = 125°C
VDS = 10V, ID = 3.7A
129
14
156
Forward Transconductance
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1740
95
2315
125
45
pF
pF
pF
Ω
VDS = 100V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
30
f = 1MHz
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
22
11
36
10
30
7
34
22
57
20
42
ns
ns
VDD = 100V, ID = 3.7A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
nC
nC
nC
VDD = 100V
ID = 3.7A
8
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 3.7A (Note 2)
0.8
70
1.2
105
357
V
ns
nC
IF = 3.7A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
238
Notes:
2
1:
R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
a. 50°C/W when mounted on
a 1 in pad of 2 oz copper
2
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
www.fairchildsemi.com
2
FDMS2672 Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
