Typical Characteristics TJ = 25°C unless otherwise noted
10
1000
ID = 9.0A
8
VDD = 20V
Ciss
VDD = 15V
6
VDD = 10V
Coss
4
100
50
2
0
f = 1MHz
= 0V
V
Crss
GS
0
3
6
9
12
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
20
25
20
15
10
5
10
VGS = 10V
TJ = 25oC
Limited by Package
TJ = 100oC
TJ = 125oC
VGS = 4.5V
R
θJC = 6.6oC/W
1
1
0.01
0
25
0.1
1
10
100
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
60
10
100
SINGLE PULSE
θJA = 125oC/W
A = 25oC
VGS = 10V
100µs
R
T
1ms
10
1
10ms
100ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
1s
0.1
T
J = MAX RATED
RθJA = 125oC/W
A = 25oC
10s
DC
1
T
0.01
0.01
0.5
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
0.1
1
10
100
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
FDMC8884 Rev.C
4
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
