Typical Characteristics TJ = 25°C unless otherwise noted
40
4
3
2
1
0
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
VGS = 3.5V
VGS = 4V
VGS = 6V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4V
VGS = 4.5V
20
VGS = 3.5V
10
VGS = 10V
VGS = 6V
20
0
0.0
0.5
1.0
1.5
2.0
0
10
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
80
ID = 9.0A
GS = 10V
PULSE DURATION = 80µs
V
1.6
1.4
1.2
1.0
0.8
0.6
DUTY CYCLE = 0.5%MAX
60
40
20
0
ID = 9.0A
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
40
60
PULSE DURATION = 80µs
VGS = 0V
DUTY CYCLE = 0.5%MAX
10
1
30
20
10
0
VDS = 5V
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.1
TJ = 150oC
TJ = 25oC
0.01
TJ = -55oC
0.001
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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FDMC8884 Rev.C
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
