Typical Electrical Characteristics
(continued)
5
V
GS
, GATE-SOURCE VOLTAGE (V)
200
I
D
= 0.5A
4
CAPACITANCE (pF)
V
DS
= 5V
10V
15V
70
Ciss
30
3
Coss
2
10
1
3
0.1
f = 1 MHz
V
GS
= 0V
0
0.4
0.8
1.2
1.6
2
0.3
1
2
5
10
Crss
0
Q
g
, GATE CHARGE (nC)
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
3
IT
IM
50
I
D
, DRAIN CURRENT (A)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
RD
S(
O
L
N)
1m
s
10m
s
POWER (W)
40
10
0m
s
SINGLE PULSE
R
θ
JA
=415°C/W
T
A
= 25°C
30
1s
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 415 °C/W
T
A
= 25°C
1
V
DS
10
s
DC
20
10
2
5
10
25
40
0
0.0001
0.001
0.01
0.1
1
10
200
, DRAI N-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=415
°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.002
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
200
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
FDG6303N Rev.F
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
