Typical Electrical Characteristics
1.5
I
D
, DRAIN-SOURCE CURRENT (A)
1.2
, NORMALIZED
3.0V
2.7V
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
2
2.5V
2.0V
V
GS
= 2.0V
1.5
0.9
2.5V
2.7V
1
3.0V
3.5V
4.5V
0.6
0.3
R
D(N
O
S)
1.5V
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
0.2
0.4
0.6
0.8
1
1.2
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
2
I
D
= 0.5A
1.4
R
DS(on)
, ON-RESISTANCE (OHM)
I
D
= 0.3A
1.6
V
GS
= 4.5 V
1.2
1.2
1
0.8
T
A
= 125°C
0.8
0.4
T
A
= 25°C
0
1
1.5
2
2.5
3
3.5
4
4.5
5
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
1
V
DS
= 5.0V
I
D
, DRAIN CURRENT (A)
0.8
25°C
125°C
I
S
, REVERSE DRAIN CURRENT (A)
T
J
= -55°C
V
GS
= 0V
T
J
= 125°C
25°C
-55°C
0.01
0.1
0.6
0.4
0.001
0.2
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6303N Rev.F
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
