Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25
o
C
V
DS
= 20 V, V
GS
= 0 V
T
J
= 55°C
V
GS
= 8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25 C
V
GS
= 4.5 V, I
D
= 0.5 A
T
J
=125°C
V
GS
= 2.7 V, I
D
= 0.2 A
o
25
26
1
10
100
V
mV/
o
C
µA
µA
nA
∆
BV
DSS
/
∆
T
J
I
DSS
I
GSS
V
GS(th)
Gate - Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
0.65
0.8
-2.6
0.34
0.55
0.44
1.5
V
mV/ C
o
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
0.45
0.77
0.6
Ω
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Source Current
Drain-Source Diode Forward Voltage
V
GS
= 2.7 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 0.5 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
0.5
1.45
50
28
9
A
S
pF
pF
pF
6
18
30
25
2.3
ns
ns
ns
ns
nC
nC
nC
0.25
A
V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
(Note 2)
V
DD
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
Ω
3
8.5
17
13
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
1.64
0.38
0.45
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
GS
= 0 V, I
S
= 0.25 A
(Note 2)
0.8
1.2
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design. R
θ
JA
= 415
O
C/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDG6303N Rev.F
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
