FDD8896 / FDU8896
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.2
I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
(
o
C)
160
200
0.9
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
5000
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
C
ISS
=
C
GS
+ C
GD
V
DD
= 15V
8
C, CAPACITANCE (pF)
1000
C
RSS
=
C
GD
C
OSS
≅
C
DS
+ C
GD
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 35A
I
D
= 5A
0
10
20
30
Q
g
, GATE CHARGE (nC)
40
50
2
V
GS
= 0V, f = 1MHz
100
0.1
0
1
10
V
D S
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
