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FDD8896 参数 Datasheet PDF下载

FDD8896图片预览
型号: FDD8896
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关
文件页数/大小: 11 页 / 130 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDD8896 / FDU8896
PSPICE Electrical Model
.SUBCKT FDD8896 2 1 3 ; rev July 2003
Ca 12 8 2.3e-9
Cb 15 14 2.3e-9
Cin 6 8 2.3e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 32.6
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 4.6e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 1.7e-9
S1A
S2A
13
8
S1B
CA
13
+
EGS
-
6
8
14
13
S2B
CB
+
EDS
-
5
8
8
RVTHRES
14
IT
-
VBAT
+
22
15
17
-
ESG
+
LGATE
GATE
1
RLGATE
CIN
EVTEMP
RGATE + 18 -
9
20 22
6
MSTRO
LSOURCE
8
RSOURCE
RLSOURCE
12
RBREAK
18
RVTEMP
19
7
SOURCE
3
6
8
EVTHRES
+ 19 -
8
LDRAIN
DPLCAP
10
RSLC1
51
ESLC
50
RDRAIN
21
16
RLDRAIN
DBREAK
11
+
17
EBREAK 18
-
MWEAK
MMED
5
DRAIN
2
RSLC2
5
51
-
RLgate 1 9 46
RLdrain 2 5 10
RLsource 3 7 17
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.2e-3
Rgate 9 20 2.1
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),10))}
.MODEL DbodyMOD D (IS=5E-12 IKF=10 N=1.01 RS=2.6e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=8.8e-10 M=0.57 TT=1e-16 XTI=0.9)
.MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=9.4e-10 IS=1e-30 N=10 M=0.4)
.MODEL MmedMOD NMOS (VTO=1.85 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.1 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.34 KP=350 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.55 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=21 RS=0.1 T_ABS=25)
.MODEL
.MODEL
.MODEL
.MODEL
.MODEL
.MODEL
.MODEL
.MODEL
.MODEL
.MODEL
.ENDS
RbreakMOD RES (TC1=8.3e-4 TC2=-4e-7)
RdrainMOD RES (TC1=1e-4 TC2=8e-6)
RSLCMOD RES (TC1=9e-4 TC2=1e-6)
RsourceMOD RES (TC1=7.5e-3 TC2=1e-6)
RvthresMOD RES (TC1=-1.7e-3 TC2=-8.8e-6)
RvtempMOD RES (TC1=-2.6e-3 TC2=2e-7)
S1AMOD
S1BMOD
S2AMOD
S2BMOD
VSWITCH
VSWITCH
VSWITCH
VSWITCH
(RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3)
(RON=1e-5 ROFF=0.1 VON=-3 VOFF=-4)
(RON=1e-5 ROFF=0.1 VON=-2 VOFF=-0.5)
(RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-2)
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options;
IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2004 Fairchild Semiconductor Corporation
+
DBODY
FDD8896 / FDU8896 Rev. C