FDD8896 / FDU8896
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150 C
o
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 35A, V
GS
= 10V
r
DS(ON)
Drain to Source On Resistance
I
D
= 35A, V
GS
= 4.5V
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
-
2.5
V
0.0047 0.0057
0.0057 0.0068
0.0075 0.0092
Ω
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
(V
GS
= 10V)
-
-
V
DD
= 15V, I
D
= 35A
V
GS
= 10V, R
GS
= 6.2Ω
-
-
-
-
-
9
106
53
41
-
171
-
-
-
-
143
ns
ns
ns
ns
ns
ns
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
2525
490
300
2.1
46
24
2.3
6.9
4.6
9.8
-
-
-
-
60
32
3.0
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
Switching Characteristics
t
O N
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 35A
I
SD
= 15A
I
SD
= 35A, dI
SD
/dt = 100A/µs
I
SD
= 35A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
27
12
V
V
ns
nC
Notes:
1:
Package current limitation is 35A.
2:
Starting T
J
= 25°C, L = 0.43mH, I
A S
= 28A, V
D D
= 27V, V
GS
= 10V.
©2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
