FDD6670A
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 15A
8
(continued)
5000
V
DS
= 5V
10V
15V
4000
CAPACITANCE (pF)
C
ISS
3000
f = 1MHz
V
GS
= 0 V
6
4
2000
2
1000
C
OSS
C
RSS
0
0
10
20
30
40
50
60
70
0
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
R
DS(ON)
LIMIT
100µs
1ms
10ms
100ms
1s
1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 96
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
P(pk), PEAK TRANSIENT POWER (W)
200
SINGLE PULSE
R
θJA
= 96 °C/W
T
A
= 25°C
I
D
, DRAIN CURRENT (A)
100
150
10
100
0.1
50
0
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 96 °C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.1
0.1
0.05
0.02
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
FDD6670A, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
