FDD6670A
February 2000
FDD6670A
N-Channel, Logic Level, PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Features
•
•
•
66 A, 30 V. R
DS(on)
= 0.008
Ω
@ V
GS
= 10 V
R
DS(on)
= 0.010
Ω
@ V
GS
= 4.5 V.
Low gate charge (35nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
Applications
•
•
DC/DC converter
Motor drives
•
D
D
G
S
TO-252
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Maximum Drain Current
P
D
-Continuous
T
A
= 25 C
-Pulsed
T
C
= 25 C
T
A
= 25 C
T
A
= 25 C
T
J
, T
stg
o
o
o
o
G
S
T
C
=25 C unless otherwise noted
o
Parameter
Ratings
30
(Note 1)
(Note 1a)
Units
V
V
A
±
20
66
15
100
70
3.2
1.3
-55 to +150
Maximum Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
W
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
°
C/W
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
FDD6670A
2000
Fairchild Semiconductor Corporation
Device
FDD6670A
Reel Size
13’’
Tape width
16mm
Quantity
2500
FDD6670A, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
