FDD6670A
Typical Characteristics
50
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
4.5V
3.5V
3.0V
I
D
, DRAIN-SOURCE CURRENT (A)
2
V
GS
= 3.0V
1.8
1.6
3.5V
1.4
1.2
1
0.8
4.0V
4.5V
6.0V
10V
40
30
20
10
0
0
1
2
3
4
5
0
10
20
30
40
50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.025
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 15A
V
GS
= 10V
1.4
I
D
= 8 A
0.02
1.2
0.015
T
A
= 125 C
0.01
o
o
1
0.8
0.005
T
A
= 25 C
0.6
-50
-25
0
25
50
75
100
o
0
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
60
I
S
, REVERSE DRAIN CURRENT (A)
100
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
V
DS
= 5V
50
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
1
1.5
2
2.5
3
3.5
4
V
GS
= 0V
10
T
A
= 125 C
1
25 C
0.1
-55 C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
o
o
o
125 C
o
25 C
o
T
A
= -55 C
o
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDD6670A, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
