Typical Electrical Characteristics
(continued)
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
3000
I
D
= -4A
8
-15V
6
CAPACITANCE (pF)
V
DS
= -5V
-10V
1000
C
iss
300
Coss
C
rss
4
2
100
f = 1 MHz
V
GS
= 0 V
0
0
3
6
9
Q
g
, GATE CHARGE (nC)
12
15
30
0.1
0.3
1
3
7
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
15
30
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics
.
80
30
-I
D
, DRAIN CURRENT (A)
10
3
1
0.3
0.1
0.03
0.01
0.1
RD
N
S(O
)L
IMI
T
5
100
us
1m
s
10m
s
10
0m
s
1s
POWER (W)
4
SINGLE PULSE
R
θ
JA
=156°C/W
T = 25°C
A
3
2
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
0.2
0.5
1
2
DC
1
5
10
20
50
0
0.01
0.1
1
10
100
300
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 156°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC658P Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
