Typical Electrical Characteristics
20
- I
D
, DRAIN-SOURCE CURRENT (A)
2
DRAIN-SOURCE ON-RESISTANCE
16
-4.0V
R
DS(on)
, NORMALIZED
V
GS
= -10V
-6.0V
-4.5V
1.8
V
GS
= -4.0 V
1.6
12
-4.5V
1.4
1.2
1
0.8
-3.5V
8
-5.0V
-6.0V
-8.0V
-10.0V
4
-3.0V
0
0
1
2
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
0
4
8
12
- I
D
, DRAIN CURRENT (A)
16
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.16
1.4
I
D
= -4A
V
GS
= -10V
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -2A
0.12
1.2
0.08
TJ = 125°C
1
0.04
0.8
TJ = 25°C
0.6
-50
0
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
2
4
6
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
V
DS
= -5V
- I
D
, DRAIN CURRENT (A)
16
T
J
= -55°C
125°C
25°C
-I
S
, REVERSE DRAIN CURRENT (A)
20
10
V
GS
= 0V
TJ = 125°C
25°C
1
12
0.1
-55°C
8
0.01
4
0.001
0
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC658P Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
