Typical Electrical And Thermal Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
1500
I
D
= -3.6A
8
V
DS
= -5V
-10V
CAPACITANCE (pF)
-15V
600
Ciss
Coss
200
6
4
2
80
0
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
f = 1 MHz
V
GS
= 0 V
30
0.1
0.2
-V
DS
Crss
0.5
1
2
5
10
30
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
10
-I
D
, DRAIN CURRENT (A)
3
1
0.3
0.1
0.03
0.01
0.1
IT
LIM
N)
(O
S
RD
5
10
1m
s
10m
s
10
0m
s
1s
0u
s
POWER (W)
4
SINGLE PULSE
R
θ
JA
=See note 1b
T
A
= 25°C
3
2
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= See Note 1b
A
T
A
= 25°C
0.2
0.5
1
2
DC
1
0
0.01
0.1
1
10
100
300
5
10
30
50
SINGLE PULSE TIME (SEC)
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
D = 0.5
0.2
0.1
0.05
0.2
0.1
P(pk)
0.05
0.02
0.01
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= See Note 1b
t
1
t
2
0.02
0.01
0.0001
T
J
- T
A
= P * R JA(t)
θ
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
0.001
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.
Transient thermal response will change depending on the circuit board design.
FDC654P Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
