Typical Electrical Characteristics
15
2
-I
D
, DRAIN-SOURCE CURRENT (A)
-6.0
-5.0
R
DS(ON)
, NORMALIZED
12
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-4.5
-4.0
V
GS
= -3.5 V
1.5
9
-4.0
-4.5
1
6
-3.5
3
-5.0
-5.5
-6.0
-7.0
-10
-3.0
0
0
1
2
3
4
, DRAIN-SOURCE VOLTAGE (V)
5
0.5
-V
DS
0
3
6
9
12
15
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.3
1.6
1.4
I
D
= -3.6A
V
GS
= -10V
R
DS(ON)
, ON-RESISTANCE (OHM)
DRAIN-SOURCE ON-RESISTANCE
I
D
= -1.8A
0.25
R
DS(ON)
, NORMALIZED
1.2
0.2
1
0.15
T
A
= 125°C
0.8
0.1
0.6
-50
25°C
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.05
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
V
DS
= -5.0V
-I
D
, DRAIN CURRENT (A)
12
T = -55°C
J
25°C
125°C
-I
S
, REVERSE DRAIN CURRENT (A)
15
15
V
GS
= 0V
1
TJ = 125°C
25°C
-55°C
9
0.1
6
0.01
3
0.001
0
0
0.5
1
1.5
2
2.5
3
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC654P Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
