FDP6035AL/FDB6035AL
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
2000
I
D
= 48A
V
DS
= 10V
20V
1600
CAPACITANCE (pF)
15V
f = 1MHz
V
GS
= 0 V
8
C
iss
1200
6
4
800
C
oss
400
2
C
rss
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
5000
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10µs
100µs
1mS
10mS
100mS
4000
SINGLE PULSE
R
θJC
= 2.9°C/W
T
A
= 25°C
100
3000
10
DC
V
GS
= 10V
SINGLE PULSE
R
θJC
= 2.9
o
C/W
T
A
= 25 C
o
2000
1000
1
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 2.9 °C/W
P(pk
t
1
t
2
T
J
- T
A
= P * R
θJC
(t)
Duty Cycle, D = t
1
/ t
2
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.00001
0.0001
0.001
t
1
, TIME (sec)
0.01
0.1
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDP6035AL/FDB6035AL Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
