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FDB6035AL 参数 Datasheet PDF下载

FDB6035AL图片预览
型号: FDB6035AL
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平MOSFET PowerTrenchTM [N-Channel Logic Level PowerTrenchTM MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 5 页 / 94 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDP6035AL/FDB6035AL
July 2003
FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrench
®
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
48 A, 30 V
R
DS(ON)
= 12 mΩ @ V
GS
= 10 V
R
DS(ON)
= 14 mΩ @ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175°C maximum junction temperature rating
D
D
G
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±
20
48
(Note 1)
Units
V
V
A
W
W/°C
°C
180
52
0.3
–65 to +175
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.9
62.5
°C/W
Package Marking and Ordering Information
Device Marking
FDB6035AL
FDP6035AL
Device
FDB6035AL
FDP6035AL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
©2003
Fairchild Semiconductor Corporation
FDP6035AL/FDB6035AL Rev D(W)