FDP6035AL/FDB6035AL
Typical Characteristics
180
V
GS
= 10V
150
I
D
, DRAIN CURRENT (A)
5.0V
120
4.5V
90
4.0V
60
3.5V
30
3.0V
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
1.8
V
GS
= 3.5V
3.5V
1.6
1.4
4.0V
4.5V
1.2
5.0V
6.0V
1
10V
0.8
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.030
R
DS(ON)
, ON-RESISTANCE (OHM)
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 24A
V
GS
=10V
I
D
= 24A
0.025
1.6
1.4
0.020
T
A
= 125
o
C
0.015
T
A
= 25 C
0.010
o
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
o
T
J
, JUNCTION TEMPERATURE ( C)
150
175
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
90
V
DS
= 5V
75
I
D
, DRAIN CURRENT (A)
I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1000
V
GS
= 0V
100
60
10
T
A
= 125 C
25
o
C
-55
o
C
o
45
T
A
= 125
o
C
30
25
o
C
15
-55
o
C
1
0.1
0.01
0
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
4.5
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6035AL/FDB6035AL Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
