Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150°C
25°C
101
-55°C
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
* Notes :
1. 250µs Pulse Test
2. TC = 25°C
100
10-1
100
101
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.10
0.08
102
VGS = 10V
0.06
101
150°C
VGS = 20V
25°C
* Notes :
0.04
1. VGS = 0V
* Note : TJ = 25°C
2. 250µs Pulse Test
100
0.2
0
25
50
75
100
125
150
175
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
9000
12
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
VDS = 50V
10
VDS = 125V
VDS = 200V
Coss
Ciss
6000
3000
0
8
6
4
2
* Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
* Note : ID = 69A
0
10-1
100
101
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDA69N25 Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
