FDH50N50 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 13. Typical Switching Losses vs.
Gate Resistance
1,000
Figure 14. Unclamped Inductive Switching
Capability
100
Notes :
1. If R = 0
Ω
t
AV
= (L)(I
AS
)/(1.3 Rated BV
DSS
- V
DD
)
800
Eoff
600
I
AS
, Avalanche Current [A]
2. If R
≠
0
Ω
t
AV
= (L/R)In[(I
AS
x R)/(1.3 Rated BV
DSS
- V
DD
)+1]
Energy [
µ
J]
Eon
400
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125 C
!
o
10
Starting T
J
= 150 C
o
Starting T
J
= 25 C
o
200
0
0
5
10
15
20
25
30
35
40
45
50
1
0.01
0.1
1
10
100
R
G
, Gate resistance [
Ω
]
t
AV
, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
10
-1
D=0.5
0.2
0.1
0.05
Notes :
o
1. Z
θ
JC
(t) = 0.2 C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
Z
θ
JC
(t), Thermal Response
10
-2
0.02
0.01
single pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Square W ave Pulse Duration [sec]
5
FDH50N50 / FDA50N50 Rev. A
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
