FDH50N50 / FDA50N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDH50N50
FDA50N50
Device
FDH50N50
FDA50N50
Package
TO-247
TO-3P
Reel Size
-
-
Tape Width
-
-
Quantity
30
30
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Conditions
V
GS
= 0V, I
D
= 250µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125°C
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 24A
V
DS
= 40V, I
D
= 48A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
(Note 4)
Min.
500
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
Max Units
--
--
25
250
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
3.0
--
--
--
0.089
20
5.0
0.105
--
V
Ω
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 400V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V to 400V, V
GS
= 0V
V
DD
= 250V, I
D
= 48A
R
G
= 25Ω
--
--
--
--
--
4979
760
50
161
342
6460
1000
65
--
--
pF
pF
pF
pF
pF
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 400V, I
D
= 48A
V
GS
= 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
105
360
225
230
105
33
45
220
730
460
470
137
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, I
AS
= 48A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
48A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 48A
V
GS
= 0V, I
S
= 48A
dI
F
/dt =100A/µs
(Note 4)
--
--
--
--
--
--
--
--
580
10
48
192
1.4
--
--
A
A
V
ns
µC
2
FDH50N50 / FDA50N50 Rev. A
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
