FDH50N50 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.0
R
DS(ON)
, (Normalized)
1.1
1.5
1.0
1.0
0.9
Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
0.5
Notes :
1. V
GS
= 10 V
2. I
D
= 24 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
10
3
Figure 10. Maximum Drain Current
vs. Case Temperature
50
Operation in This Area
is Limited by R
DS(on)
40
I
D
, Drain Current [A]
1 ms
10 ms
10
1
I
D
, Drain Current [A]
3
10
2
10 us
100 us
30
DC
20
10
0
Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
10
10
-1
10
0
10
1
10
2
10
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
4,000
3,500
3,000
2,500
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125 C
o
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
45
40
35
30
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125 C
!
o
di/dt [A/
µ
S]
dv/dt [V/nS]
di/dt(on)
2,000
1,500
1,000
500
0
0
5
10
15
20
25
30
35
40
45
50
25
20
15
10
5
0
0
5
10
dv/dt(on)
dv/dt(off)
di/dt(off)
15
20
25
30
35
40
45
50
R
G
, Gate resistance [
Ω
]
R
G
, Gate resistance [
Ω
]
4
FDH50N50 / FDA50N50 Rev. A
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
