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FCD9N60N 参数 Datasheet PDF下载

FCD9N60N图片预览
型号: FCD9N60N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 784 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Performance Characteristics (Continued)  
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
3.0  
1.2  
1.1  
1.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.9  
*Notes:  
1. VGS = 0V  
*Notes:  
1. VGS = 10V  
2. ID = 250μA  
2. ID = 4.5A  
0.8  
-100  
-50  
0
50  
100  
150  
oC  
200  
-100  
-50  
0
50  
100  
150  
oC  
200  
TJ, Junction Temperature  
[
]
TJ, Junction Temperature  
[
]
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
10  
50  
20μs  
100μs  
10  
1
8
6
4
2
0
1ms  
Operation in This Area  
is Limited by R DS(on)  
10ms  
DC  
0.1  
0.01  
*Notes:  
1. TC = 25oC  
2. TJ = 150oC  
3. Single Pulse  
25  
50  
75  
100  
125  
]
150  
1
10  
100  
1000  
TC, Case Temperature  
[
oC  
VDS, Drain-Source Voltage [V]  
Figure 11. Transient Thermal Response Curve  
2
1
0.5  
0.2  
0.1  
PDM  
0.1  
0.05  
t1  
t2  
0.02  
0.01  
*Notes:  
1. ZθJC(t) = 1.35oC/W Max.  
2. Duty Factor, D= t1/t2  
3. TJM - TC = PDM * ZθJC(t)  
Single pulse  
0.01  
0.005  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
Rectangular Pulse Duration [sec]  
www.fairchildsemi.com  
FCD9N60NTM Rev. A  
4
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