Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
60
50
VGS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
10
1
150oC
-55oC
25oC
*Notes:
1. 250
2. TC = 25oC
*Notes:
1. VDS = 20V
μ
s Pulse Test
2. 250
μ
s Pulse Test
0.1
0.4
0.1
1
10
4
5
6
7
8 9
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
0.9
0.8
0.7
0.6
0.5
0.4
0.3
100
150oC
10
1
25oC
VGS = 10V
VGS = 20V
*Notes:
1. VGS = 0V
2. 250 s Pulse Test
*Note: TC = 25oC
μ
0
10
20
30
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
50000
C
C
C
= C + C = shorted)
(
C
iss
gs gd ds
= C + C
ds gd
= C
gd
oss
rss
VDS = 150V
DS = 300V
DS = 480V
10000
1000
100
10
Coss
Ciss
V
8
6
4
2
0
V
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
*Note: ID = 4.5A
15
1
0.1
0
5
10
20
1
10
100
600
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FCD9N60NTM Rev. A
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
