BC847S
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
- 40 °C
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
125 °C
- 40 °C
25 °C
0.8
0.6
0.4
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
25 °C
125 °C
β
= 10
0.4
V
CE
= 5.0 V
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
40
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 45V
CAPACITANCE (pF)
4
3
5
Input and Output Capacitance
vs Reverse Bias Voltage
f = 1.0 MHz
1
C te
2
1
0
C ob
4
20
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
V
CE
- COLLECTOR VOLTAGE (V)
10
7
5
150 MHz
175 MHz
CHARAC TERIS TICS R ELATI VE TO VALUE AT T
A
= 25 C
Contours of Constant Gain
Bandwidth Product (f
T
)
Normalized Collect or-Cutoff Current
vs Ambient Temperature
°
100
1000
100
3
2
125 MHz
100 MHz
75 MHz
10
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
