BC847S
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 150°C
45
50
50
6.0
15
5.0
V
V
V
V
nA
µA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
110
630
0.25
0.65
0.7
0.77
V
V
V
V
0.58
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
Current Gain - Bandwidth Product
Output Capacitance
I
C
= 20 mA, V
CE
= 5.0,
f = 100 mHz
V
CB
= 10 V, f = 1.0 MHz
200
2.0
MHz
pF
Typical Characteristics
1200
1000
800
600
25 °C
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
V
CE
= 5.0 V
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
125 °C
β
= 10
0.15
0.1
0.05
0.1
25 °C
- 40 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
100
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
