BC847S 参数 Datasheet PDF下载

BC847S

BC847S

E2

B2

C1

SC70-6

Mark: 1C

pin #1

C2

B1

E1

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.

NPN Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector

currents to 200 mA. Sourced from Process 07.

Absolute Maximum Ratings*

Symbol

V

CEO

V

CES

V

CBO

V

EBO

I

C

T

J

, T

stg

Collector-Base Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Collector-Emitter Voltage

T

A

= 25°C unless otherwise noted

Parameter

Value

45

50

50

6.0

200

-55 to +150

Units

V

V

V

V

mA

°C

4

Operating and Storage Junction Temperature Range

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)

These ratings are based on a maximum junction temperature of 150 degrees C.

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

P

D

R

θJA

T

A

= 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Max

BC847S

300

2.4

415

Units

mW

mW/°C

°C/W

2001

Fairchild Semiconductor Corporation

Rev.A1