HUF76132P3, HUF76132S3S
o
Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)
A
PARAMETER
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
t
V
R
R
= 15V, I
75A,
-
-
-
-
-
-
-
72
ns
ns
ns
ns
ns
ns
ON
DD
D
= 0.20, V
= 10V,
L
GS
Turn-On Delay Time
t
11
37
65
42
-
-
d(ON)
= 6.8Ω
GS
(Figures 16, 21, 22)
Rise Time
t
-
r
Turn-Off Delay Time
t
-
-
d(OFF)
Fall Time
t
f
Turn-Off Time
t
160
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
V
V
V
= 0V to 10V
= 0V to 5V
= 0V to 1V
V
R
= 15V, I
D
= 0.341Ω
44A,
-
-
-
-
-
44
25
52
30
2.2
-
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
DD
L
Gate Charge at 5V
Q
g(5)
I
= 1.0mA
g(REF)
(Figures 14, 19, 20)
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Q
1.8
g(TH)
Q
4.80
13.50
gs
gd
Q
-
C
V
= 25V, V
GS
= 0V,
-
-
-
1650
850
-
-
-
pF
pF
pF
ISS
DS
f = 1MHz
(Figure 13)
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
C
200
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
V
I
I
I
= 44A
-
-
-
-
-
-
1.25
71
SD
SD
SD
SD
t
= 44A, dI /dt = 100A/µs
SD
ns
rr
Reverse Recovered Charge
Q
= 44A, dI /dt = 100A/µs
SD
104
nC
RR
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
80
60
40
20
0
V
= 10V
GS
V
= 4.5V
GS
0
25
50
75
100
125
150
25
50
75
100
125
150
o
T , AMBIENT TEMPERATURE ( C)
o
A
T , CASE TEMPERATURE ( C)
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76132P3, HUF76132S3S Rev. C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
