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76132P 参数 Datasheet PDF下载

76132P图片预览
型号: 76132P
PDF下载: 下载PDF文件 查看货源
内容描述: 75A , 30V , 0.011 Ohm的N通道,逻辑电平UltraFET功率MOSFET [75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs]
分类和应用:
文件页数/大小: 11 页 / 280 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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HUF76132P3, HUF76132S3S  
PSPICE Electrical Model  
SUBCKT HUF76132 2 1 3 ;  
REV May 1998  
CA 12 8 2.35e-9  
CB 15 14 2.35e-9  
CIN 6 8 1.45e-9  
LDRAIN  
DPLCAP  
5
DRAIN  
2
DBODY 7 5 DBODYMOD  
DBREAK 5 11 DBREAKMOD  
DPLCAP 10 5 DPLCAPMOD  
10  
RLDRAIN  
RSLC1  
51  
+
DBREAK  
EBREAK 11 7 17 18 33.34  
EDS 14 8 5 8 1  
EGS 13 8 6 8 1  
ESG 6 10 6 8 1  
EVTHRES 6 21 19 8 1  
EVTEMP 20 6 18 22 1  
RSLC2  
5
51  
ESLC  
11  
-
50  
+
-
17  
18  
-
DBODY  
RDRAIN  
6
EBREAK  
ESG  
8
EVTHRES  
+
16  
21  
+
-
19  
8
IT 8 17 1  
MWEAK  
LGATE  
EVTEMP  
+
RGATE  
GATE  
1
6
-
18  
22  
LDRAIN 2 5 1e-9  
LGATE 1 9 5.42e-9  
LSOURCE 3 7 4.16e-9  
MMED  
9
20  
MSTRO  
8
RLGATE  
LSOURCE  
CIN  
MMED 16 6 8 8 MMEDMOD  
MSTRO 16 6 8 8 MSTROMOD  
MWEAK 16 21 8 8 MWEAKMOD  
SOURCE  
3
7
RSOURCE  
RLSOURCE  
RBREAK 17 18 RBREAKMOD 1  
RDRAIN 50 16 RDRAINMOD 3.5e-4  
RGATE 9 20 2.61  
RLDRAIN 2 5 10  
RLGATE 1 9 54.2  
RLSOURCE 3 7 41.6  
RSLC1 5 51 RSLCMOD 1e-6  
RSLC2 5 50 1e3  
S1A  
S2A  
RBREAK  
12  
15  
13  
14  
13  
17  
18  
8
RVTEMP  
19  
-
S1B  
S2B  
13  
CB  
CA  
IT  
14  
+
+
VBAT  
6
8
5
8
RSOURCE 8 7 RSOURCEMOD 6.5-3  
RVTHRES 22 8 RVTHRESMOD 1  
RVTEMP 18 19 RVTEMPMOD 1  
EGS  
EDS  
+
-
-
8
22  
RVTHRES  
S1A 6 12 13 8 S1AMOD  
S1B 13 12 13 8 S1BMOD  
S2A 6 15 14 13 S2AMOD  
S2B 13 15 14 13 S2BMOD  
VBAT 22 19 DC 1  
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*450),3))}  
.MODEL DBODYMOD D (IS = 1.79e-12 IKF = 20 RS = 5.32e-3 TRS1 = 7e-4 TRS2 = 1.21e-6 CJO = 2.65e-9 TT = 3.24e-8 M = 4.2e-1 XTI=6)  
.MODEL DBREAKMOD D (RS = 8.25e-2 TRS1 = 9.12e-4 TRS2 = 8.14e-7)  
.MODEL DPLCAPMOD D (CJO = 1.3e-9 IS = 1e-30 N = 10 M = 6.1e-1)  
.MODEL MMEDMOD NMOS (VTO = 1.86 KP = 4 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.61)  
.MODEL MSTROMOD NMOS (VTO = 2.2 KP = 120 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)  
.MODEL MWEAKMOD NMOS (VTO = 1.63 KP =1e-1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 26.1 RS=1e-1)  
.MODEL RBREAKMOD RES (TC1 = 9.97e-4 TC2 = 1.24e-7)  
.MODEL RDRAINMOD RES (TC1 = 7.2e-2 TC2 = 1e-4)  
.MODEL RSLCMOD RES (TC1 = 1.07e-3 TC2 = 1.25e-6)  
.MODEL RSOURCEMOD RES (TC1 = 1e-11 TC2 = 1e-11)  
.MODEL RVTHRESMOD RES (TC1 = -2e-3 TC2 = -9.2e-6)  
.MODEL RVTEMPMOD RES (TC1 = -1.08e-3 TC2 = 9.73e-7)  
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.00 VOFF= -1.00)  
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.00 VOFF= -6.00)  
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 1.65)  
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF= 0.00)  
.ENDS  
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global  
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.  
©2003 Fairchild Semiconductor Corporation  
HUF76132P3, HUF76132S3S Rev. C1  
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