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EX29DS160-90RTCI 参数 Datasheet PDF下载

EX29DS160-90RTCI图片预览
型号: EX29DS160-90RTCI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆( 4M ×8 / 2M ×16 )的CMOS 3.0伏只,同时操作闪存 [32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 59 页 / 771 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
ADVANCED INFORMATION  
Excel Semiconductor inc.  
DEVICE BUS OPERATIONS  
Several device operational modes are provided in  
the ES29DL320 device. Commands are used to ini-  
tiate the device operations. They are latched and  
stored into internal registers with the address and  
data information needed to execute the device  
operation.  
Simultaneous Read/Write Operation  
This device is capable of reading data from one bank  
of memory while programming or erasing in the  
other bank of memory. An erase operation may also  
be suspended to read from or program to another  
location within the same bank (except the sector  
being erased). Figure 33 shows how read and write  
cycles may be initiated for simultaneous operation  
with zero latency. Refer to the CMOS DC character-  
istics Table11 for further current specification.  
The available device operational modes are listed  
in Table 1 with the required inputs, controls, and the  
resulting outputs. Each operational mode is  
described in further detail in the following subsec-  
tions.  
Word/Byte Mode Configuration ( BYTE# )  
Read  
The device data output can be configured by BYTE#  
into one of two modes : word and byte modes. If the  
BYTE# pin is set at logic ‘1’, the device is configured  
in word mode, DQ0 - DQ15 are active and controlled  
by CE# and OE#. If the BYTE# pin is set at logic ‘0’,  
the device is configured in byte mode, and only data  
I/O pins DQ0 - DQ7 are active and controlled by CE#  
and OE#. The data I/O pins DQ8 - DQ14 are tri-  
stated, and the DQ15 pin is used as an input for the  
LSB (A-1) address.  
The internal state of the device is set for the read  
mode and the device is ready for reading array data  
upon device power-up, or after a hardware reset. To  
read the stored data from the cell array of the  
device, CE# and OE# pins should be driven to V  
IL  
while WE# pin remains at V . CE# is the power  
IH  
control and selects the device. OE# is the output  
control and gates array data to the output pins.  
Word or byte mode of output data is determined by  
the BYTE# pin. No additional command is needed  
in this mode to obtain array data. Standard micro-  
processor read cycles that assert valid addresses  
on the device address inputs produce valid data on  
the device data outputs. Each bank stays at the  
read mode until another operation is activated by  
writing commands into the internal command regis-  
ter. Refer to the AC read cycle timing diagrams for  
further details ( Fig. 18 ).  
Standby Mode  
When the device is not selected or activated in a  
system, it needs to stay at the standby mode, in  
which current consumption is greatly reduced with  
outputs in the high impedance state.  
6
Rev. 0E May 25, 2006  
ES29DL320  
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