E S I
E S I
ADVANCED INFORMATION
Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
The ES29DL320 is a 32 megabit, 3.0 volt-only flash
memory device, organized as 4M x 8 bits (Byte
mode) or 2M x 16 bits (Word mode) which is config-
urable by BYTE#. Eight boot sectors and sixty three
main sectors with uniform size are provided : 8K
bytes x 8 and 64K bytes x 63. The device is manu-
factured with ESI’s proprietary, high performance
and highly reliable 0.18um CMOS flash technology.
The device can be programmed or erased in-sys-
tem with standard 3.0 Volt Vcc supply (2.7V-3.6V)
and can also be programmed in standard EPROM
programmers. The device offers minimum endur-
ance of 100,000 program/erase cycles and more
than 20 years of data retention.
Therefore, this lock indicator bit (DQ7) can be prop-
erly used to avoid that any customer-lockable part is
used to replace a factory-locked part. The extra
security sector is an extra memory space for cus-
tomers when it is used as a customer-lockable ver-
sion. So, it can be read and written like any other
sectors. But it should be noted that the number of E/
W(Erase and Write) cycles is limited to 300 times
(maximum) only in the Security Sector.
Special services such as ESN and factory-locked
are available to customers ( ESI’s Special-Code
service ) The ES29DL320 is completely compatible
with the JEDEC standard command set of single
power supply Flash. Commands are written to the
internal command register using standard write tim-
ings of microprocessor and data can be read out
from the cell array in the device with the same way
as used in other EPROM or flash devices.
The ES29DL320 offers access time as fast as
70ns or 90ns, allowing operation of high-speed
microprocessors without wait states. Three sepa-
rate control pins are provided to eliminate bus con-
tention : chip enable (CE#), write enable (WE#) and
output enable (OE#).
Simultaneous Read / Write Operation
All program and erase operation are automatically
and internally performed and controlled by embed-
ded program/erase algorithms built in the device.
The device automatically generates and times the
necessary high-voltage pulses to be applied to the
cells, performs the verification, and counts the num-
ber of sequences. Some status bits (DQ7, DQ6 and
DQ5) read by data# polling or toggling between
consecutive read cycles provide to the users the
internal status of program/erase operation: whether
it is successfully done or still being progressed.
The simultaneous read / write architecture provides
simultaneous operation by dividing the memory
space into multi-bank. Sector addresses are fixed,
system software can be used to form user-defined
bank groups.
During an erase / program operation, any of the non-
busy banks may be read from. Note that only two
banks can operate simultaneously. The device
allows a host system to program or erase in one
bank, then immediately and simultaneously read
from the other bank, with zero latency. This releases
the system from waiting for the completion of pro-
gram or erase operations.
Extra Security Sector of 256 bytes
In the device, an extra security sector of 256 bytes
is provided to customers. This extra sector can be
used for various purposes such as storing ESN
(Electronic Serial Number) or customer’s security
codes. Once after the extra sector is written, it can
be permanently locked by the device manufacturer(
factory-locked) or a customer(customer-lockble).
At the same time, a lock indicator bit (DQ7) is per-
manently set to a 1 if the part is factory- locked, or
set to 0 if it is customer-lockable.
The ES29DL320 can be organized as either a top or
bottom boot sector configuration.
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Rev. 0E May 25, 2006
ES29DL320
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
