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EX29DS160-90RTCI 参数 Datasheet PDF下载

EX29DS160-90RTCI图片预览
型号: EX29DS160-90RTCI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆( 4M ×8 / 2M ×16 )的CMOS 3.0伏只,同时操作闪存 [32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 59 页 / 771 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
ADVANCED INFORMATION  
Excel Semiconductor inc.  
COMMAND DEFINITIONS  
Writing specific address and data commands or  
sequences into the command register initiates  
device operations. Table 9 defines the valid register  
command sequences. Note that writing incorrect  
address and data values or writing them in the  
improper sequence may place the device in an  
unknown state. A reset command is required to  
return the device to normal operation.  
the Device Bus Operations section for more informa-  
tion.The Read-Only Operations table provides the  
read parameters, and Fig. 18 shows the timing dia-  
gram  
RESET COMMAND  
Writing the reset command resets the banks to the  
read or erase-suspend-read mode. Address bits are  
don’t cares for this command.  
All addresses are latched on the falling edge of WE#  
or CE#, whichever happens later. All data is latched  
on the rising edge of WE# or CE#, whichever hap-  
pens first. Refer to the AC Characteristics section for  
timing diagrams.  
The reset command may be written between the  
sequence cycles in an erase command sequence  
before erasing begins. This resets the bank to which  
the system was writing to the read mode. Once era-  
sure begins, however, the device ignores reset com-  
mands until the operation is complete.  
READING ARRAY DATA  
The device is automatically set to reading array data  
after device power-up. No commands are required  
to retrieve data. Each bank is ready to read array  
data after completing an Embedded Program or  
Embedded Erase algorithm.  
The reset command may be written between the  
sequence cycles in a program command sequence  
before programming begins. This resets the bank to  
which the system was writing to the read mode. If  
the program command sequence is written to a bank  
that is in the Erase Suspend mode, writing the reset  
command returns that bank to the erase-suspend-  
read mode. Once programming begins, however, the  
device ignores reset commands until the operation is  
complete.  
After the device accepts an Erase Suspend com-  
mand, the corresponding bank enters the erase-sus-  
pend-read mode, after which the system can read  
data from any non-erase-suspended sector within  
the same bank. After completing a programming  
operation in the Erase Suspend mode, the system  
may once again read array data with the same  
exception. See the Erase Suspend/Erase Resume  
Commands section for more information.  
The reset command may be written between the  
sequence cycles in an autoselect command  
sequence. Once in the autoselect mode, the reset  
command must be written to return to the read  
mode. If a bank entered the autoselect mode while  
in the Erase Suspend mode, writing the reset com-  
mand returns that bank to the erase-suspend-read  
mode.  
The system must issue the reset command to return  
a bank to the read (or erase-suspend-read) mode if  
DQ5 goes high during an active program or erase  
operation, or if the bank is in the autoselect mode.  
See the next section, Reset Command, for more  
information.  
If DQ5 goes high during a program or erase opera-  
tion, writing the reset command returns the bank to  
the read mode (or erase-suspend-read mode if that  
bank was in Erase-Suspend).  
See also Requirements for Reading Array Data in  
22  
Rev. 0E May 25, 2006  
ES29DL320  
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