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EX29DS160-90RTCI 参数 Datasheet PDF下载

EX29DS160-90RTCI图片预览
型号: EX29DS160-90RTCI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆( 4M ×8 / 2M ×16 )的CMOS 3.0伏只,同时操作闪存 [32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 59 页 / 771 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
ADVANCED INFORMATION  
Excel Semiconductor inc.  
Table 7. Device Geometry Definition  
Addresses  
(Word Mode)  
Addresses  
(Byte Mode)  
Data  
Description  
Device Size = 2N byte  
27h  
4Eh  
0016h  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash Device Interface Description  
02 = x8, x16 Asynchronous  
Max. number of bytes multi-byte write = 2N  
(00h = not supported)  
2Ah  
2Bh  
54h  
56h  
0000h  
0000h  
2Ch  
58h  
0002h  
Number of Erase Block Regions within device  
2Dh  
2Eh  
5Ah  
5Ch  
0007h  
0000h  
Erase Block Region 1 Information  
Number of identical size erase block = 0007h+1 =8  
2Fh  
30h  
5Eh  
60h  
0020h  
0000h  
Erase Block Region 1 Information  
Number of identical size erase block = 0020h * 256byte = 8Kbyte  
31h  
32h  
62h  
64h  
003Eh  
0000h  
Erase Block Region 2 Information  
Number of identical size erase block = 003Eh+1 =63  
33h  
34h  
66h  
68h  
0000h  
0001h  
Erase Block Region 2 Information  
Number of identical size erase block = 0100h * 256byte = 64Kbyte  
35h  
36h  
6Ah  
6Ch  
0000h  
0000h  
Erase Block Region 3 Information  
Erase Block Region 3 Information  
Erase Block Region 4 Information  
Erase Block Region 4 Information  
37h  
38h  
6Eh  
70h  
0000h  
0000h  
39h  
3Ah  
72h  
74h  
0000h  
0000h  
3Bh  
3Ch  
76h  
78h  
0000h  
0000h  
20  
Rev. 0E May 25, 2006  
ES29DL320  
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