E S I
E S I
Excel Semiconductor inc.
Document Title
16M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Mar. 15, 2004
Initial Release Version.
1. The bias condtion of RESET# in Table 1 for A9 high-Voltage
method
is changed from V to H.
ID
Rev. 0B
Apr. 23, 2004
2. The bias condition of A9 in Table 1 for A9 high-Voltage method
is added.
3. The typical byte and word program time are changed from 5us/
7us to 6us/8us.
4. The dimension of FBGA is changed from 8 x 9mm to 6 x 8mm
Rev. 0C
May. 21, 2004
1. 80R product is removed and 70R product is newly added.
1. The preliminary is removed from the datasheet.
2. The 44 pin SO is removed.
3. The Icc3 (max) is changed from 5uA to 10uA.
4. The Icc4 (max) is changed from 5uA to 10uA.
5. The Icc5 (max) is changed from 5uA to 10uA.
6. The overall thickness of FBGA , A (max), is changed from 1.20
to 1.10. Therefore, ball height (A1) and body thickness (A2)
also is changed accordingly.
Rev. 1A
Dec. 1, 2004
7. The ball diameter of FBGA, b(min), b(nom), b(max), is changed
from 0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.
1. The arrow from Erase Suspend Read to Read is changed to
Sector Erase.
Rev. 1B
Dec. 13, 2004
2. V
(min), 2.3V is added
LKO
53
Rev. 1C Jan 5 , 2006
ES29LV160D
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
