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ES29BDS160FB-12TG 参数 Datasheet PDF下载

ES29BDS160FB-12TG图片预览
型号: ES29BDS160FB-12TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 54 页 / 708 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
Table 20. ERASE AND PROGRAMMING PERFORMANCE  
Parameter  
Typ (Note 1) Max (Note 2) Unit  
Comments  
Sector Erase Time  
0.7  
25  
6
15  
sec  
sec  
us  
Excludes 00h programming prior to  
erasure (Note 4)  
Chip Erase Time  
Byte Program Time  
Word Program Time  
150  
210  
8
us  
Exclude system level overhead (Note 5)  
Byte Mode  
Word Mode  
12.6  
8.4  
37.8  
25.2  
Chip Program Time (Note 3)  
sec  
Notes:  
1. Typical program and erase times assume the following conditions: 25oC, 3.0V Vcc, 10,000 cycles. Additionally, programming  
typicals assume checkerboard pattern.  
2. Under worst case conditions of 90oC, Vcc = 2.7V, 100,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes  
program faster than the maximum program times listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See  
Table 9 for further information on command definitions.  
6. The device has a minimum erase and program cycle endurance of 100,000 cycles  
.
Table 21. LATCHUP CHARACTERISTICS  
Description  
Min  
Max  
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)  
Input voltage with respect to Vss on all I/O pins  
- 1.0V  
- 1.0V  
12.5 V  
Vcc + 1.0 V  
+100 mA  
Vcc Current  
- 100 mA  
Note: Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time  
Table 22. TSOP, SO, AND BGA PACKAGE CAPACITANCE  
Parameter Symbol  
Parameter Description  
Test Setup  
Typ  
Max  
7.5  
5.0  
12  
Unit  
TSOP  
6
pF  
pF  
pF  
pF  
pF  
pF  
CIN  
Input Capacitance  
VIN = 0  
VOUT = 0  
VIN = 0  
FBGA  
TSOP  
FBGA  
TSOP  
FBGA  
4.2  
8.5  
5.4  
7.5  
3.9  
COUT  
Output Capacitance  
6.5  
9
CIN2  
Control Pin Capacitance  
4.7  
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25oC, f=1.0MHz.  
Table 23. DATA RETENTION  
Parameter Description  
Test conditions  
Min  
Unit  
150oC  
125oC  
10  
Years  
Years  
Minimum Pattern Data Retention Time  
20  
47  
Rev. 1C Jan 5 , 2006  
ES29LV160D  
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