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ES29BDS160FB-12TG 参数 Datasheet PDF下载

ES29BDS160FB-12TG图片预览
型号: ES29BDS160FB-12TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 54 页 / 708 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
AC CHARACTERISTICS  
PD for program  
SA for sector erase  
555 for chip erase  
555 for program  
2AA for erase  
Data Polling  
Address  
PA  
tAH  
tAS  
tWC  
tWH  
WE#  
tGHEL  
OE#  
CE#  
tWHWH1 or 2  
tCP  
tCPH  
tWS  
tDS  
tBUSY  
tDH  
DOUT  
DQ7#  
DATA  
tRH  
PD for program  
30 for sector erase  
10 for chip erase  
A0 for program  
55 for erase  
RESET#  
RY/BY#  
NOTES :  
1. Figure indicates last two bus cycles of a program or erase operation.  
2. PA = program address, SA = sector address, PD = program data  
3. DQ7# is the complement of the data written to the device. Dout is the data written to the device.  
4. Waveforms are for the word mode.  
Figure 27. Alternate CE# Controlled  
Write(Erase/Program) Operation Timings  
44  
Rev. 1C Jan 5 , 2006  
ES29LV160D  
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