E S I
E S I
Excel Semiconductor inc.
Document Title
8M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Mar. 15, 2004
Initial Release Version.
1. The bias condtion of RESET# in Table 1 for A9 high-Voltage method
is changed from VID to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method is
Rev. 0B
Apr. 23, 2004
added.
3. The typical byte and word program time are changed from 5us/7us to
6us/8us.
4. The dimension of FBGA is changed from 8 x 9mm to 6 x 8mm.
1. The preliminary is removed from the datasheet.
2. The 44 pin SO is removed.
3. The Icc3 (max) is changed from 5uA to 10uA.
4. The Icc4 (max) is changed from 5uA to 10uA.
5. The Icc5 (max) is changed from 5uA to 10uA.
6. The VIL(max) is changed from 0.8V to 0.5V.
Rev. 1A
Dec. 1, 2004
7. The overall thickness of FBGA , A (max), is changed from 1.20 to
1.10. Therefore, ball height (A1) and body thickness (A2) also is
changed accordingly.
8. The ball diameter of FBGA, b(min), b(nom), b(max), is changed from
0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.
1. The arrow from Erase Suspend Read to Read is changed to Sector
Rev. 1B
Dec. 13, 2004
Erase.
2. VLKO(min), 2.3V is added
Rev. 1C
Rev. 1D
Sep. 30, 2005
Jan. 5, 2006
1. Add tVLHT parameter (page 42)
1. Add RoHS-Compliant Package Option
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The attached datasheets are provided by Excel Semiconductor.inc (ESI). ESI reserves the right to change the spec-
ifications and products. ESI will answer to your questions about device. If you have any questions, please contact the
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50
Rev. 1D January 5, 2006
ES29LV800D
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
