E S I
E S I
Excel Semiconductor inc.
Table 16. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2) Unit
Comments
Sector Erase Time
0.7
14
6
10
sec
sec
us
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
Byte Program Time
Word Program Time
150
210
8
us
Exclude system level overhead (Note 5)
Byte Mode
Word Mode
6.3
4.2
18.9
12.6
Chip Program Time (Note 3)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25oC, 3.0V Vcc, 10,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90oC, Vcc = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles
.
Table 17. LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)
Input voltage with respect to Vss on all I/O pins
- 1.0V
- 1.0V
12.5 V
Vcc + 1.0 V
+100 mA
Vcc Current
- 100 mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Table 18. TSOP, SO, AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
7.5
5.0
12
Unit
TSOP
6
pF
pF
pF
pF
pF
pF
CIN
Input Capacitance
VIN = 0
VOUT = 0
VIN = 0
FBGA
TSOP
FBGA
TSOP
FBGA
4.2
8.5
5.4
7.5
3.9
COUT
Output Capacitance
6.5
9
CIN2
Control Pin Capacitance
4.7
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25oC, f=1.0MHz.
Table 19. DATA RETENTION
Parameter Description
Test conditions
Min
Unit
150oC
125oC
10
20
Years
Minimum Pattern Data Retention Time
Years
44
Rev. 1D January 5, 2006
ES29LV800D
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
