Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
1200
15
V
A
Dauergleichstrom
DC forward current
IŒ
IŒç¢
I²t
Periodischer Spitzenstrom
t« = 1 ms
30
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
20,0
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 15 A, V•Š = 0 V
IŒ = 15 A, V•Š = 0 V
TÝÎ = 25°C
TÝÎ = 125°C
1,90 2,50
2,00
V
V
VŒ
Rückstromspitze
peak reverse recovery current
IŒ = 15 A, - diŒ/dt = 900 A/µs (TÝÎ=125°C)
Vç = 600 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
26,0
27,0
A
A
Iç¢
Sperrverzögerungsladung
recovered charge
IŒ = 15 A, - diŒ/dt = 900 A/µs (TÝÎ=125°C)
Vç = 600 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
1,60
2,90
µC
µC
QØ
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 15 A, - diŒ/dt = 900 A/µs (TÝÎ=125°C)
Vç = 600 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
0,50
1,00
mJ
mJ
EØþÊ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
1,75 1,95 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
1,30
K/W
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
Diode-Gleichrichter / diode-rectifier
Höchstzulässige Werte / maximum rated values
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒç¢»¢
I碻¢
IŒ»¢
1600
30
V
A
A
Durchlassstrom Grenzeffektivwert pro Dio.
T† = 80°C
forward current RMS maximum per diode
Gleichrichter Ausgang Grenzeffektivstrom
T† = 80°C
30
maximum RMS current at Rectifier output
Stoßstrom Grenzwert
surge forward current
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
300
245
A
A
Grenzlastintegral
I²t - value
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
450
300
A²s
A²s
I²t
Charakteristische Werte / characteristic values
Durchlassspannung
TÝÎ = 150°C, IŒ = 15 A
forward voltage
min. typ. max.
0,85
VŒ
Iç
V
Sperrstrom
reverse current
TÝÎ = 150°C, Vç = 1600 V
2,00
mA
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
1,20 1,35 K/W
1,15 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Daniel Kreuzer
approved by: Marc Buschkühle
date of publication: 2006-10-11
revision: 2.0
2
EUPEC [ EUPEC GMBH ]
