Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T3
IGBT-Wechselrichter / IGBT-inverter
Vorläufige Daten / preliminary data
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C, TÝÎ = 150°C
T† = 25°C, TÝÎ = 150°C
I† ÒÓÑ
I†
15
25
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
I†ç¢
PÚÓÚ
30
A
W
V
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 150°C
105
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 15 A, V•Š = 15 V
I† = 15 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C
1,70 2,10
1,90
V
V
V†Š ÙÈÚ
V•ŠÚÌ
Q•
Gate-Schwellenspannung
gate threshold voltage
I† = 0,60 mA, V†Š = V•Š, TÝÎ = 25°C
V•Š = -15 V ... +15 V
5,0
5,8
0,15
0,0
6,5
V
µC
Â
Gateladung
gate charge
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
1,10
0,04
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
CØþÙ
I†Š»
Kollektor-Emitter Reststrom
collector-emitter cut-off current
1,0
Gate-Emitter Reststrom
gate-emitter leakage current
I•Š»
tÁ ÓÒ
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 15 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 62 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,055
0,055
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 15 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 62 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,02
0,025
µs
µs
tØ
tÁ ÓËË
tË
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 15 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 62 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,37
0,47
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 15 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 62 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,075
0,12
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 15 A, V†Š = 600 V, L» = 50 nH
V•Š = ±15 V, di/dt = 900 A/µs (TÝÎ=125°C)
R•ÓÒ = 62 Â
TÝÎ = 25°C
TÝÎ = 125°C
1,60
2,15
mJ
mJ
EÓÒ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 15 A, V†Š = 600 V, L» = 50 nH
V•Š = ±15 V, du/dt = 2600 V/µs (TÝÎ=125°C) TÝÎ = 125°C
R•ÓËË = 62 Â
TÝÎ = 25°C
0,90
1,35
mJ
mJ
EÓËË
Kurzschlussverhalten
SC data
V•Š ù 15 V, V†† = 900 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
t« ù 10 µs, TÝÎ = 125°C
60
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
1,10 1,20 K/W
1,05 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Daniel Kreuzer
approved by: Marc Buschkühle
date of publication: 2006-10-11
revision: 2.0
1
EUPEC [ EUPEC GMBH ]
