Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ™ = f (t)
V•Š = ±15 V, I† = 15 A, V†Š = 600 V
9,0
10
EÓÒ, TÝÎ = 125°C
EÓËË, TÝÎ = 125°C
ZÚÌœ™ : IGBT
8,0
7,0
6,0
5,0
4,0
3,0
2,0
1,0
1
i:
1
2
3
4
rÍ[K/W]: 0,0945 0,2144 0,8197 1,0214
0,0005 0,005 0,05 0,2
τÍ[s]:
0,0
0,1
0,001
50 100 150 200 250 300 350 400 450 500 550 600
R• [Â]
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 62 Â, TÝÎ = 125°C
33
30
27
24
21
18
15
12
9
30
27
24
21
18
15
12
9
TÝÎ = 25°C
TÝÎ = 125°C
6
6
I†, Modul
I†, Chip
3
3
0
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0
VΠ[V]
prepared by: Daniel Kreuzer
approved by: Marc Buschkühle
date of publication: 2006-10-11
revision: 2.0
7
EUPEC [ EUPEC GMBH ]
