Technische Information / technical information
IGBT-Module
IGBT-modules
DDB2U30N08VR
Vorläufige Daten
preliminary data
IGBT-Brems-Chopper / IGBT-brake-chopper
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
600
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 70°C, TÝÎ = 150°C
T† = 25°C, TÝÎ = 150°C
I†ÒÓÑ
I†
20
25
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
I†ç¢
PÚÓÚ
40
A
W
V
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 150°C
83,5
+/-20
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 20 A, V•Š = 15 V
I† = 20 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C
1,95 2,55
2,20
V
V
V†Š ÙÈÚ
V•ŠÚÌ
Q•
Gate-Schwellenspannung
gate threshold voltage
I† = 0,50 mA, V†Š = V•Š, TÝÎ = 25°C
V•Š = -15 V ... +15 V
4,5
5,5
6,5
V
µC
Â
Gateladung
gate charge
0,11
0,00
0,88
0,08
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
CØþÙ
I†Š»
Kollektor-Emitter Reststrom
collector-emitter cut-off current
1,0
Gate-Emitter Reststrom
gate-emitter leakage current
I•Š»
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 20 A, V†Š = 300 V
V•Š = ±15 V
R•ÓÒ = 27 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,018
0,018
µs
µs
tÁ ÓÒ
tØ
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 20 A, V†Š = 300 V
V•Š = ±15 V
R•ÓÒ = 27 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,02
0,02
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 20 A, V†Š = 300 V
V•Š = ±15 V
R•ÓËË = 27 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,10
0,11
µs
µs
tÁ ÓËË
tË
Fallzeit (induktive Last)
fall time (inductive load)
I† = 20 A, V†Š = 300 V
V•Š = ±15 V
R•ÓËË = 27 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,025
0,035
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 20 A, V†Š = 300 V
V•Š = ±15 V
R•ÓÒ = 27 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,40
0,50
mJ
mJ
EÓÒ
EÓËË
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 20 A, V†Š = 300 V
V•Š = ±15 V
R•ÓËË = 27 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,35
0,55
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎ = 125°C, V†† = 360 V, V†ŠÑÈà = V†Š» -LÙ†Š · di/dt
IȠ
90
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
1,35 1,50 K/W
0,60 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
RÚ̆™
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-8-27
revision: 2.1
2
EUPEC [ EUPEC GMBH ]
