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BSM50GP60 参数 Datasheet PDF下载

BSM50GP60图片预览
型号: BSM50GP60
PDF下载: 下载PDF文件 查看货源
内容描述: Hochstzulassige Werte /最大额定值 [Hochstzulassige Werte / Maximum rated values]
分类和应用: 晶体晶体管功率控制局域网
文件页数/大小: 12 页 / 136 K
品牌: EUPEC [ EUPEC GMBH ]
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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM50GP60  
Elektrische Eigenschaften / Electrical properties  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Modulinduktivität  
stray inductance module  
LσCE  
-
-
-
100  
-
nH  
Modul Leitungswiderstand, Anschlüsse-Chip  
TC = 25°C  
RCC’+EE’  
7
mΩ  
lead resistance, terminals-chip  
min. typ. max.  
Diode Wechselrichter/ Diode Inverter  
V
GE = 0V, Tvj  
VGE = 0V, Tvj = 125°C,  
IF=INenn  
VGE = -10V, Tvj  
VGE = -10V, Tvj = 125°C, VR  
IF=INenn  
VGE = -10V, Tvj  
VGE = -10V, Tvj = 125°C, VR  
IF=INenn  
VGE = -10V, Tvj  
=
25°C,  
IF  
=
=
VF  
IRM  
Qr  
50 A  
-
-
1,25  
1,2  
1,7  
-
V
V
Durchlaßspannung  
forward voltage  
IF  
50 A  
,
- diF/dt =  
1150A/µs  
300 V  
Rückstromspitze  
peak reverse recovery current  
=
25°C, VR  
=
=
-
-
35  
46  
-
-
A
A
300 V  
,
- diF/dt =  
1150A/µs  
300 V  
Sperrverzögerungsladung  
recovered charge  
=
25°C, VR  
=
=
-
-
3,4  
6,2  
-
-
µAs  
µAs  
300 V  
,
- diF/dt =  
1150A/µs  
300 V  
Abschaltenergie pro Puls  
reverse recovery energy  
=
25°C, VR  
=
=
ERQ  
-
-
0,8  
1,3  
-
-
mWs  
mWs  
VGE = -10V, Tvj = 125°C, VR  
300 V  
min. typ. max.  
Transistor Brems-Chopper/ Transistor Brake-Chopper  
V
GE = 15V, Tvj  
=
25°C, IC  
=
=
VCE sat  
25,0 A  
25,0 A  
-
-
2,2  
2,5  
2,75  
-
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
VGE = 15V, Tvj = 125°C, IC  
Gate-Schwellenspannung  
gate threshold voltage  
V
CE = VGE Tvj = 25°C, IC  
,
=
VGE(TO)  
0,5 mA  
4,5  
-
5,5  
1,1  
6,5  
-
V
f = 1MHz, Tvj = 25°C  
CE = 25 V, VGE = 0 V  
VGE = 0V, Tvj 25°C, VCE  
VGE = 0V, Tvj = 125°C, VCE  
Eingangskapazität  
input capacitance  
Cies  
ICES  
nF  
V
=
=
=
600 V  
600 V  
-
-
0,7  
1,0  
500  
-
µA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
mA  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
300  
nA  
min. typ. max.  
Diode Brems-Chopper/ Diode Brake-Chopper  
Tvj = 25°C,  
IF  
IF  
=
=
VF  
25,0 A  
25,0 A  
-
-
1,6  
2,05  
-
V
V
Durchlaßspannung  
forward voltage  
Tvj = 125°C,  
1,65  
min. typ. max.  
NTC-Widerstand/ NTC-Thermistor  
Nennwiderstand  
rated resistance  
TC = 25°C  
R25  
-
5
-
kΩ  
%
Abweichung von R  
100  
TC = 100°C, R100 = 493 Ω  
TC = 25°C  
-5  
5
R/R  
P25  
deviation of R  
100  
Verlustleistung  
power dissipation  
20  
mW  
K
B-Wert  
B-value  
R2 = R1 exp [B(1/T - 1/T1)]  
B25/50  
3375  
2
3(11)  
DB-PIM-9.xls