Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
stray inductance module
LσCE
-
-
-
100
-
nH
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C
RCC’+EE’
7
mΩ
lead resistance, terminals-chip
min. typ. max.
Diode Wechselrichter/ Diode Inverter
V
GE = 0V, Tvj
VGE = 0V, Tvj = 125°C,
IF=INenn
VGE = -10V, Tvj
VGE = -10V, Tvj = 125°C, VR
IF=INenn
VGE = -10V, Tvj
VGE = -10V, Tvj = 125°C, VR
IF=INenn
VGE = -10V, Tvj
=
25°C,
IF
=
=
VF
IRM
Qr
50 A
-
-
1,25
1,2
1,7
-
V
V
Durchlaßspannung
forward voltage
IF
50 A
,
- diF/dt =
1150A/µs
300 V
Rückstromspitze
peak reverse recovery current
=
25°C, VR
=
=
-
-
35
46
-
-
A
A
300 V
,
- diF/dt =
1150A/µs
300 V
Sperrverzögerungsladung
recovered charge
=
25°C, VR
=
=
-
-
3,4
6,2
-
-
µAs
µAs
300 V
,
- diF/dt =
1150A/µs
300 V
Abschaltenergie pro Puls
reverse recovery energy
=
25°C, VR
=
=
ERQ
-
-
0,8
1,3
-
-
mWs
mWs
VGE = -10V, Tvj = 125°C, VR
300 V
min. typ. max.
Transistor Brems-Chopper/ Transistor Brake-Chopper
V
GE = 15V, Tvj
=
25°C, IC
=
=
VCE sat
25,0 A
25,0 A
-
-
2,2
2,5
2,75
-
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C, IC
Gate-Schwellenspannung
gate threshold voltage
V
CE = VGE Tvj = 25°C, IC
,
=
VGE(TO)
0,5 mA
4,5
-
5,5
1,1
6,5
-
V
f = 1MHz, Tvj = 25°C
CE = 25 V, VGE = 0 V
VGE = 0V, Tvj 25°C, VCE
VGE = 0V, Tvj = 125°C, VCE
Eingangskapazität
input capacitance
Cies
ICES
nF
V
=
=
=
600 V
600 V
-
-
0,7
1,0
500
-
µA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
300
nA
min. typ. max.
Diode Brems-Chopper/ Diode Brake-Chopper
Tvj = 25°C,
IF
IF
=
=
VF
25,0 A
25,0 A
-
-
1,6
2,05
-
V
V
Durchlaßspannung
forward voltage
Tvj = 125°C,
1,65
min. typ. max.
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
TC = 25°C
R25
-
5
-
kΩ
%
Abweichung von R
100
TC = 100°C, R100 = 493 Ω
TC = 25°C
-5
5
∆R/R
P25
deviation of R
100
Verlustleistung
power dissipation
20
mW
K
B-Wert
B-value
R2 = R1 exp [B(1/T - 1/T1)]
B25/50
3375
2
3(11)
DB-PIM-9.xls
EUPEC [ EUPEC GMBH ]
