Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Tvj = 150°C
Tvj = 150°C
Tvj = 150°C,
TC = 25°C
IF
=
VF
V(TO)
rT
50 A
-
-
-
-
-
1,3
-
1,35
0,8
10,5
-
V
Schleusenspannung
threshold voltage
V
Ersatzwiderstand
slope resistance
-
mΩ
mA
mΩ
Sperrstrom
reverse current
VR
=
IR
1600 V
2
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
RAA’+CC’
5
-
min. typ. max.
Transistor Wechselrichter/ Transistor Inverter
VGE = 15V, Tvj
=
25°C, IC
=
VCE sat
50 A
50 A
-
-
1,95
2,2
2,55
-
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C, IC
=
Gate-Schwellenspannung
gate threshold voltage
V
CE = VGE
,
Tvj = 25°C, IC
=
VGE(TO)
1,0 mA
4,5
-
5,5
2,8
6,5
-
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
Cies
ICES
nF
VGE = 0V, Tvj = 25°C, VCE
VGE = 0V, Tvj =125°C, VCE
=
=
600 V
600 V
-
-
1,5
2,0
500
-
µA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE =20V, Tvj =25°C
IGES
-
-
300
nA
IC = INenn
,
VCC
GE = ±15V, Tvj = 25°C, RG
GE = ±15V, Tvj = 125°C, RG
VCC
GE = ±15V, Tvj = 25°C, RG
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
300 V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
V
V
td,on
22 Ohm
22 Ohm
300 V
-
-
50
50
-
-
ns
ns
I
C = INenn,
Anstiegszeit (induktive Last)
rise time (inductive load)
V
tr
22 Ohm
22 Ohm
300 V
-
-
55
55
-
-
ns
ns
VGE = ±15V, Tvj = 125°C, RG
C = INenn VCC
GE = ±15V, Tvj = 25°C, RG
GE = ±15V, Tvj = 125°C, RG
VCC
GE = ±15V, Tvj = 25°C, RG
I
,
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
V
V
td,off
22 Ohm
22 Ohm
300 V
-
-
260
275
-
-
ns
ns
I
C = INenn,
Fallzeit (induktive Last)
fall time (inductive load)
V
tf
22 Ohm
22 Ohm
300 V
-
-
30
40
-
-
ns
ns
VGE = ±15V, Tvj = 125°C, RG
C = INenn VCC
I
,
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG
LS
Eon
Eoff
ISC
22 Ohm
75 nH
-
-
-
2,3
1,7
200
-
-
-
mWs
mWs
A
I
C = INenn
,
VCC
300 V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG
22 Ohm
75 nH
LS
GE ≤ 15V, RG
VCC
t
P ≤ 10µs,
V
=
22 Ohm
360 V
Kurzschlußverhalten
SC Data
Tvj≤125°C,
=
dI/dt = 3000 A/µs
2(11)
DB-PIM-9.xls
EUPEC [ EUPEC GMBH ]
