EM6AB160
EtronTech
Figure 22. Write to Read Max tDQSS Interrupting
T4
T8
T9
T10
T11
T12
T0
T1
T2
T3
T5
T6
T7
CK
CK
COMMAND
ADDRESS
WRITE
READ
NOP
NOP
NOP
NOP
tWTR
Bank
Col o
Bank
Col n
CL=3
tDQSS (max)
DQS
DQ
DI
n
DM
DI n, etc. = Data In for column n, etc.
1 subsequent elements of Data In are applied in the programmed order following DI n
An interrupted burst of 8 is shown, 2 data elements are written
tWTR is referenced from the first positive CK edge after the last Data In Pair
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
The READ and WRITE commands are to the same devices but not necessarily to the same bank
DM= UDM & LDM
Don’t Care
Rev.1.3
42
Jun. /2015