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EM6AB160WKE-5H 参数 Datasheet PDF下载

EM6AB160WKE-5H图片预览
型号: EM6AB160WKE-5H
PDF下载: 下载PDF文件 查看货源
内容描述: [32M x 16 bit DDR Synchronous DRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 62 页 / 560 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AB160  
EtronTech  
Figure 26. Write to Precharge Max tDQSS ODD Number of Data Interrupting  
T8  
T9  
T10  
T11  
T4  
T0  
T1  
T2  
T3  
T5  
T6  
T7  
CK  
CK  
COMMAND  
ADDRESS  
WRITE  
NOP  
NOP  
NOP  
NOP  
PRE  
tWR  
Bank a,  
Col n  
Bank  
(a or all)  
tRP  
tDQSS (max)  
*2  
DQS  
DQ  
DI  
n
DM  
*1  
*1  
*1  
*1  
DI n = Data In for column n  
An interrupted burst of 4 or 8 is shown, 1 data element is written  
tWR is referenced from the first positive CK edge after the last Data In Pair  
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)  
*1 = can be don't care for programmed burst length of 4  
*2 = for programmed burst length of 4, DQS becomes don't care at this point  
DM= UDM & LDM  
Don’t Care  
Rev.1.3  
46  
Jun. /2015  
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