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EM6AB160WKE-5H 参数 Datasheet PDF下载

EM6AB160WKE-5H图片预览
型号: EM6AB160WKE-5H
PDF下载: 下载PDF文件 查看货源
内容描述: [32M x 16 bit DDR Synchronous DRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 62 页 / 560 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AB160  
EtronTech  
Figure 20. Random Write Cycles Max tDQSS  
T4  
T8  
T9  
T0  
T1  
T2  
T3  
T5  
T6  
T7  
CK  
CK  
COMMAND  
ADDRESS  
WRITE  
WRITE  
WRITE  
WRITE  
WRITE  
Bank  
Col r  
Bank  
Col n  
Bank  
Col o  
Bank  
Col p  
Bank  
Col q  
tDQSS (max)  
DQS  
DQ  
DI  
n
DI  
n'  
DI  
o
DI  
o'  
DI  
p'  
DI  
p
DI  
q'  
DI  
q
DM  
DI n, etc. = Data In for column n, etc.  
n', etc. = the next Data In following DI n, etc. according to the programmed burst order  
Programmed Burst Length 2, 4, or 8 in cases shown  
If burst of 4 or 8, the burst would be truncated  
Each WRITE command may be to any bank and may be to the same or different devices  
DM= UDM & LDM  
Don’t Care  
Rev.1.3  
40  
Jun. /2015  
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